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Raymond Tung


Location: 3438 Ingersoll Hall
Phone: 718.951.5418
Fax: 718.951.4407
Email:   Raymond Tung's Web site

The bulk of Raymond Tung's research career was spent at Bell Laboratories, during which time he had the following accomplishments: Demonstrated the control of growth orientation of heteroepitaxial metal-semiconductor systems; discovered a correlation of the Schottky barrier height with the atomic structure of epitaxial metal-semiconductor interfaces; elucidated transport mechanism at multilayered, epitaxial, hot electron devices (metal-based transistor); theoretically developed and experimentally verified a carrier transport theory for inhomogeneous Schottky barriers; resolved various metallization and junction issues facing deep sub-micron silicon devices; invented oxide-mediated epitaxy: a manufacturable epitaxial silicide technology; developed a bond-polarization theory that explains the Fermi level pinning phenomenon at polycrystalline interfaces; and conceived a charge-density theory on the formation of semiconductor heterojunction band offset.

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